1 power transistors 2sb943 silicon pnp epitaxial planar type for power switching complementary to 2sd1268 n features l low collector to emitter saturation voltage v ce(sat) l satisfactory linearity of foward current transfer ratio h fe l large collector current i c l full-pack package which can be installed to the heat sink with one screw n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings C130 C80 C7 C6 C3 30 2 150 C55 to +150 unit v v v a a w ?c ?c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency turn-on time storage time fall time symbol i cbo i ebo v ceo h fe1 h fe2 * v ce(sat) v be(sat) f t t on t stg t f conditions v cb = C100v, i e = 0 v eb = C5v, i c = 0 i c = C10ma, i b = 0 v ce = C2v, i c = C 0.1a v ce = C2v, i c = C 0.5a i c = C2a, i b = C 0.1a i c = C2a, i b = C 0.1a v ce = C10v, i c = C 0.5a, f = 10mhz i c = C 0.5a, i b1 = C50ma, i b2 = 50ma min C80 45 90 typ 30 0.3 1.1 0.3 max C10 C50 260 C 0.5 C1.5 unit m a m a v v v mhz m s m s m s * h fe2 rank classification rank q p h fe2 90 to 180 130 to 260 t c =25 c ta=25 c unit: mm 1:base 2:collector 3:emitter toC220 full pack package(a) 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip 4.0 0.5 +0.2 ?.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.25 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 f 3.1 0.1
2 power transistors 2sb943 p c ta i c v ce v ce(sat) i c v be(sat) i c h fe i c f t i c c ob v cb t on , t stg , t f i c area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 50 40 30 20 10 (1) t c =ta (2) with a 100 100 2mm al heat sink (3) with a 50 50 2mm al heat sink (4) without heat sink (p c =2w) (1) (4) (3) (2) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 010 8 26 4 0 ? ? ? ? ? ? t c =25?c ?0ma ?0ma ?0ma ?0ma ?6ma ?0ma ?2ma ?ma ?ma i b =?00ma collector to emitter voltage v ce ( v ) collector current i c ( a ) ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 i c /i b =20 25?c t c =100?c ?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 i c /i b =20 t c =?00?c 25?c ?5?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) ?0.01 ?0.1 ? ?0 ?0.03 ?0.3 ? 1 3 10 30 100 300 1000 3000 10000 v ce =?v t c =100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce =?0v f=10mhz t c =25?c collector current i c ( a ) transition frequency f t ( mhz ) ?0.1 1 ?0 ?00 ?0.3 3 ?0 1 3 10 30 100 300 1000 3000 10000 i e =0 f=1mhz t c =25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0 ?.2 ?0.8 ?.4 ?.6 0.01 0.03 0.1 0.3 1 3 10 30 100 t stg t on t f pulsed t w =1ms duty cycle=1% i c /i b =10 (? b1 =i b2 ) v cc =?0v t c =25?c collector current i c ( a ) switching time t on ,t stg ,t f ( m s ) ? ?0 ?00 ?000 ? ?0 ?00 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 1ms 10ms t=0.5ms i cp i c non repetitive pulse t c =25?c dc collector to emitter voltage v ce ( v ) collector current i c ( a )
3 power transistors 2sb943 r th(t) t 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 10 ? 10 ? 1 10 10 3 10 2 (1) (2) (1) without heat sink (2) with a 100 100 2mm al heat sink time t ( s ) thermal resistance r th (t) ( ?c/w )
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